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最近瀏覽過的商品

pic

RF5110GTR7

廠商：
RFMD
類別：
RFMD射頻IC
包裝：
-
封裝：
QFN-16
無鉛情況/ROHS：
-
描述：
3V GSM/GPRS and General Purpose/I...

我要詢價(jià)我要收藏

  • 參數(shù)
  • 描述
  • 文檔
參數(shù) 數(shù)值
Package QFN-16
VSUPPLY (V) 3.6
PA ISUPPLY (mA) 1500
Efficiency (%) 57
POUT (dBm) 35
PA Gain (dB) 33
Gain (dB) 32
Frequency Range (Max) (MHz) 960
ISUPPLY (mA) 1000
Frequency Range (Min) (MHz) 150
OP1dB (dBm) 35

詳細(xì)描述

The RF5110G is a high-power, high-gain, high-efficiency power amplifier. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in GSM hand-held equipment in the 900MHz band, and general purpose radio applications in standard sub-bands from 150MHz to 960MHz. On-board power control provides over 70dB of control range with an analog voltage input, and allows for power down with a logic "low" in standby operation. The device is self-contained with 50? input and the output can be easily matched to obtain optimum power and efficiency characteristics.


特點(diǎn)
Single 2.8V to 3.6V Supply
32dBm Output Power
52% Efficiency
150MHz to 960MHz Operation

請選擇文檔類型：
文檔(Document)
文檔名稱 文檔類型 軟件 描述
RF5110GTR7PDF下載 點(diǎn)擊下載 點(diǎn)擊下載 RF5110G Manufacturing Note
RF5110GTR7PDF下載 點(diǎn)擊下載 點(diǎn)擊下載 RF5110G Data Sheet