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RFCM2680TR7

廠商：
RFMD
類別：
RFMD射頻IC
包裝：
-
封裝：
MCM
無鉛情況/ROHS：
-
描述：
45MHz to 1003MHz GaAs/GaN Power D...

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  • 參數(shù)
  • 描述
  • 文檔
參數(shù) 數(shù)值
Package MCM
Max Current (mA) 450
Max NF (dB) 4
Min Power Gain (dB) at FMAX 22.5
VSUPPLY (V) 24
NF (dB) 3
Gain (dB) 23
OIP3 (dBm) 49
Frequency Range (Max) (MHz) 1003
ISUPPLY (mA) 430
Frequency Range (Min) (MHz) 45
OP1dB (dBm) 32

詳細描述

The RFCM2680 is a Power Doubler amplifier SMD Module. The part employs GaAs pHEMT die and GaN HEMT die, has high output capability, and is operated from 45MHz to 1003MHz. It provides excellent linearity and superior return loss performance with low noise and optimal reliability.

DC current of the device can be externally adjusted for optimum distortion performance versus power consumption over a wide range of output level.


特點
Excellent Linearity
Superior Return Loss Performance
Extremely Low Distortion
Optimal Reliability
Low Noise
Unconditionally Stable Under all Terminations
Extremely High Output Capability
22.5dB Min. Gain at 1003MHz
450mA Max. at 24VDC

請選擇文檔類型：
文檔(Document)
文檔名稱 文檔類型 軟件 描述
RFCM2680TR7PDF下載 點擊下載 點擊下載 RFCM2680 Data Sheet
RFCM2680TR7PDF下載 點擊下載 點擊下載 Brochure: RFCM2680—The World’s First GaN-Based Surface Mount Power Doubler
RFCM2680TR7PDF下載 點擊下載 點擊下載 Brochure: CATV GaN Amplifier Modules