Description
32M-bit 3 Volt Parallel Flash Memory with Page Mode
Features
32k-Word/64k-Byte uniform sector architecture
16-Word/32-Byte write buffer
8-word/16-Byte page read buffer
Secured Silicon Sector area
Enhanced Sector Protect using Dynamic and Individual mechanisms?
Polling/Toggling methods are used to detect the status of program and erase operation
Suspend and resume commands used for program and erase operations
More than 100,000 erase/program cycles
More than 20-year data retention
Low power consumption
Deep power down mode
Wide temperature ranges
Compatible manufacturer ID for drop-in?replacement
Faster Erase and Program time
CFI(Common Flash Interface) support
Single 3V Read/Program/Erase(2.7 - 3.6V)
Enhanced Variable IO control
#WP/ACC Input
Ready/#Busy output(RY/#BY)detects completion of program or erase cycle