Description
64M-bit 3 Volt Parallel Flash Memory with Page Mode
Features
32k-Word/64k-Byte uniform sector architecture
16-Word/32-Byte write buffer
8-Word/16-Byte page read buffer
Secured Silicon Sector area
Enhanced Sector Protect using Dynamic and Individual mechanisms
Polling/Toggling methods are used to detect the status of program and erase operation
Suspend and resume commands used for program and erase operations
More than 100,000 erase/program cycles
More than 20-year data retention
Low power consumption
Deep power down mode
? Wide temperature range
Compatible manufacturer ID for drop-in replacement
Faster Erase and Program time
CFI (Common Flash Interface) support
Single 3V Read/Program/Erase (2.7 - 3.6V)
Enhanced Variable IO control
#WP/ACC Input
Hardware reset input (#reset) resets device
Ready/#Busy output (RY/#BY) detects completion of program or erase cycle