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W9412G6JB

廠商:
Winbond
類別:
利基動(dòng)態(tài)隨機(jī)存取內(nèi)存
包裝:
-
封裝:
Packaged in 60 Ball(8x13mm2)TFBGA, using Lead free materials with RoHS compliant
無鉛情況/ROHS:
無鉛
描述:
The W9412G6JB is a 128M DDR SDRAM...

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  • 參數(shù)
  • 描述
參數(shù) 數(shù)值
Speed Grade CL3//-5/200 MHz
Voltage 2.5V±0.2V
Status P
RoHS Y
Package Packaged in 60 Ball(8x13mm2)TFBGA, using Lead free materials with RoHS compliant
Organization 8Mbitx16/4 Banks

Description
The W9412G6JB is a 128M DDR SDRAM and speed involving -4 and -5/-5I Status: Not recommended for new design.
Features
2.5V ±0.2V Power Supply for DDR400
2.5V ~ 2.7V Power Supply for DDR500
Up to 250 MHz Clock Frequency
Double Data Rate architecture; two data transfers per clock cycle
Differential clock inputs (CLK and /CLK)
DQS is edge-aligned with data for Read; center-aligned with data for Write
CAS Latency: 2, 2.5, 3 and 4
Burst Length: 2, 4 and 8
Auto Refresh and Self Refresh
Precharged Power Down and Active Power Down
Write Data Mask
Write Latency = 1
15.6μS refresh interval (4K/64 mS Refresh)
Maximum burst refresh cycle: 8
Interface: SSTL_2

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