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W9425G6EH

廠商：
Winbond
類別：
利基動態(tài)隨機(jī)存取內(nèi)存
包裝：
-
封裝：
Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant
無鉛情況/ROHS：
無鉛
描述：
The W9425G6EH is a 256M DDR SDRAM...

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  • 參數(shù)
  • 描述
  • 文檔
參數(shù) 數(shù)值
Speed Grade CL2.5//-6/-6I/166 MHz
Speed Grade CL3//-4/250 MHz
Speed Grade CL3//-5/-5I/200 MHz
Voltage 2.6V ±0.1V 2.5V ±0.2V
Voltage 2.5V ±0.2V
Voltage 2.6V ±0.1V
Status NRFND
Status NRFND
RoHS Y
RoHS Y
Package Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant
Package Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant
Organization 16Mbitx16
Organization 16Mbitx16/4 Banks
Speed -4_250MHz_CL3,? -5/-5I_200MHz_CL3, -6/-6I_16MHz_CL2.5

Description
The W9425G6EH is a 256M DDR SDRAM and speed involving -4/-5/-5I/-6/-6I Status: Not recommended for new design.
Features
2.5V ±0.2V Power Supply for DDR333/400
2.6V ±0.1V Power Supply for DDR500
Up to 250 MHz Clock Frequency
Double Data Rate architecture; two data transfers per clock cycle
Differential clock inputs (CLK and /CLK)
DQS is edge-aligned with data for Read; center-aligned with data for Write
CAS Latency: 2, 2.5, 3 and 4
Burst Length: 2, 4 and 8
Auto Refresh and Self Refresh
Precharged Power Down and Active Power Down
Write Data Mask
Write Latency = 1
7.8μS refresh interval (8K/64 mS refresh)
Maximum burst refresh cycle: 8
Interface: SSTL_2

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