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W9425G6JB

廠商：
Winbond
類別：
利基動(dòng)態(tài)隨機(jī)存取內(nèi)存
包裝：
-
封裝：
Packaged in 60 Ball TFBGA, using lead free materials with RoHS compliant
無鉛情況/ROHS：
無鉛
描述：
The W9425G6JB is a 256M DDR SDRAM...

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  • 參數(shù)
  • 描述
  • 文檔
參數(shù) 數(shù)值
Organization 16Mbitx16
Voltage 2.5V ±0.2V
Speed (-5/-5I)_200MHz_CL3
Package Packaged in 60 Ball TFBGA, using lead free materials with RoHS compliant
Status P
RoHS Y
Voltage 2.5V ±0.2V
Package Packaged in 60 Ball TFBGA, using lead free materials with RoHS compliant
Status P
Organization 16Mbitx16/4 Banks
RoHS Y
Speed Grade CL3//-5/-5I/200 MHz

Description
The W9425G6JB is a 256M DDR SDRAM and speed involving -5/-5I Status:
Features
2.5V ±0.2V Power Supply?
Up to 200 MHz Clock Frequency
Double Data Rate architecture; two data transfers per clock cycle?
Differential clock inputs (CLK and /CLK)
DQS is edge-aligned with data for Read; center-aligned with data for Write?
CAS Latency: 2, 2.5 and 3
Burst Length: 2, 4 and 8?
Auto Refresh and Self Refresh?
Precharged Power Down and Active Power Down?
Write Data Mask?
Write Latency = 1
7.8μS refresh interval (8K/64 mS Refresh)
Maximum burst refresh cycle: 8?
Interface: SSTL_2?

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