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W9425G8EH

廠商:
Winbond
類別:
利基動(dòng)態(tài)隨機(jī)存取內(nèi)存
包裝:
-
封裝:
Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant
無(wú)鉛情況/ROHS:
無(wú)鉛
描述:
The W9425G8EH is a 256M DDR SDRAM...

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  • 參數(shù)
  • 描述
  • 文檔
參數(shù) 數(shù)值
Organization 32Mbitx8
Voltage 2.5V±0.2V
Speed -5_200MHz_CL3
Package Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant
Status EOL
RoHS Y
Voltage 2.5V±0.2V
Package Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant
Status EOL
Organization 32Mbitx8/4 Banks
RoHS Y
Speed Grade CL3//-5/200 MHz

Description
The W9425G8EH is a 256M DDR SDRAM and speed involving -5/-6/-75 Status: End of life
Features
2.5V ±0.2V Power Supply for DDR266/333/400
Up to 200 MHz Clock Frequency
Double Data Rate architecture; two data transfers per clock cycle
Differential clock inputs (CLK and /CLK)
DQS is edge-aligned with data for Read; center-aligned with data for Write
CAS Latency: 2, 2.5 and 3
Burst Length: 2, 4 and 8
Auto Refresh and Self Refresh
Precharged Power Down and Active Power Down
Write Data Mask
Write Latency = 1
7.8μS refresh interval (8K/64 mS refresh)
Maximum burst refresh cycle: 8
Interface: SSTL_2

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