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W9464G6IH

廠商:
Winbond
類別:
利基動(dòng)態(tài)隨機(jī)存取內(nèi)存
包裝:
-
封裝:
Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant
無鉛情況/ROHS:
無鉛
描述:
The W9464G6IH is a 64M DDR SDRAM ...

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  • 參數(shù)
  • 描述
  • 文檔
參數(shù) 數(shù)值
Speed Grade CL2.5//-6/-6I/166 MHz
Speed Grade CL3//-5/-5I/200 MHz
Speed Grade CL3/CL4//-4/250 MHz
Voltage 2.5V±0.2V
Voltage 2.6V±0.1V
Status NRFND
RoHS Y
Package Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant
Organization 4Mbitx16/4 Banks

Description
The W9464G6IH is a 64M DDR SDRAM and speed involving -4/-5/-5I/-6/-6I Status: Not recommended for new design.
Features
2.5V ±0.2V Power Supply for DDR333/400
2.6V ±0.1V Power Supply for DDR500
Up to 250 MHz Clock Frequency
Double Data Rate architecture; two data transfers per clock cycle
Differential clock inputs (CLK and /CLK)
DQS is edge-aligned with data for Read; center-aligned with data for Write
CAS Latency: 2, 2.5, 3 and 4
Burst Length: 2, 4 and 8
Auto Refresh and Self Refresh
Precharged Power Down and Active Power Down
Write Data Mask
Write Latency = 1
15.6μS refresh interval (4K/64 mS refresh)
Maximum burst refresh cycle: 8
Interface: SSTL_2

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