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W9725G8JB

廠商:
Winbond
類別:
利基動態(tài)隨機存取內存
包裝:
-
封裝:
WBGA 60 Ball (8X12.5 mm2), using Lead free materials with RoHS compliant
無鉛情況/ROHS:
無鉛
描述:
The W9725G8JB is a 256M bits DDR2...

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參數(shù) 數(shù)值
Speed Grade DDR2-1066//-18
Speed Grade DDR2-667//-3
Speed Grade DDR2-800//-25/25I
Voltage 1.8V±0.1V
CL-tRCD-tRP 5-5-5
CL-tRCD-tRP 5-5-5/6-6-6
CL-tRCD-tRP 7-7-7
Status P
RoHS Y
Package WBGA 60 Ball (8X12.5 mm2), using Lead free materials with RoHS compliant
Organization 32Mbitx8/4 Banks

Description
The W9725G8JB is a 256M bits DDR2 SDRAM, and speed involving -18, -25, 25I and -3 Status: Mass Production
Features
Power Supply: VDD, VDDQ = 1.8 V ± 0.1 V
Double Data Rate architecture: two data transfers per clock cycle?
CAS Latency: 3, 4, 5, 6 and 7?
Burst Length: 4 and 8?
Bi-directional, differential data strobes (DQS and /DQS ) are transmitted / received with data
Edge-aligned with Read data and center-aligned with Write data?
DLL aligns DQ and DQS transitions with clock
Differential clock inputs (CLK and /CLK)
Data masks (DM) for write data
Commands entered on each positive CLK edge, data and data mask are referenced to both edges of /DQS?
Posted /CAS programmable additive latency supported to make command and data bus efficiency
Read Latency = Additive Latency plus CAS Latency (RL = AL + CL)?
Off-Chip-Driver impedance adjustment (OCD) and On-Die-Termination (ODT) for better signal quality
Auto-precharge operation for read and write bursts
Auto Refresh and Self Refresh modes?
Precharged Power Down and Active Power Down
Write Data Mask
Write Latency = Read Latency - 1 (WL = RL - 1)?
Interface: SSTL_18

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