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MC33395EW

廠商:
Freescale
類別:
預(yù)驅(qū)動器
包裝:
-
封裝:
SOIC 32 300ML
無鉛情況/ROHS:
無鉛
描述:
TPD - THREE PHASE DRIVER

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  • 參數(shù)
  • 描述
  • 文檔
參數(shù) 數(shù)值
Ambient Operating Temperature (Min-Max) (°C) -40 to 125
Diagnostics None
Harmonized Tariff (US) Disclaimer 8542.31.0000
Interface and Input Control Parallel
Life Cycle Description (code) REMOVED FROM ACTIVE PORTFOLIO
Load Supply Voltage (Max) (V) 24
Load Supply Voltage (Min) (V) 4.5
Material Composition Declaration (MCD) Download MCD Report
Maximum Time at Peak Temperature (s) 30
Micron Size (μm) 3
Pin/Lead/Ball Count 32
RoHS Certificate of Analysis (CoA) Contact Us
Sample Exception Availability N
Supply Voltage (Min-Max) (V) 5.5 to 18
Power Output Load - Number of Channels 6
2nd Level Interconnect e3
Application/Qualification Tier COMMERCIAL, INDUSTRIAL, AUTOMOTIVE
Export Control Classification Number (US) EAR99
Floor Life 168 HOURS
Material Type Tested Packaged Device
Moisture Sensitivity Level (MSL) 3
Mounting Style Surface Mount
Number of Reflow Cycles 3
Package Material Plastic
REACH SVHC Freescale REACH Statement
Tape & Reel No
Peak Package Body Temperature (PPT)(°C) 245
UL94 (plastics flammability test) V0: burning stops within 10 seconds on a vertical specimen; no drips allowed
Status No Longer Manufactured
Device Weight (g) .51000
Package Thickness (nominal) (mm) 2.650
Description TPD - THREE PHASE DRIVER
Budgetary Price($US) -
Package Width (nominal) (mm) 11.000
Part Number MC33395EW
Protection Over Current / Over Temperature / Overvoltage / Shoot Through / Undervoltage Detect / Reverse Battery
Additional Features-Analog Internal Charge Pump / PWM Capable
Device Function Pre-Driver / H-Bridge and Config Switches
Package Description and Mechanical Drawing SOIC 32 300ML
Package Length (nominal) (mm) 7.500

The MC33395 combines gate drive, charge pump, current sense, and protection circuitry necessary to drive 3-phase bridge configuration of six N-channel power MOSFETs. Mode logic is incorporated to route a pulse width modulation (PWM )signal to either the low-side FETs or high-side FETS of the bridge, or to provide complementary PWM outputs to both the low and high sides of the bridge. Pulse width modulation frequencies up to 28 kHz are possible. Very few external components are required to implement the 3-phase bridge gate driver: Three tiny capacitors for the charge pump, a current sense resistor, and a few current limit comparator biasing resistors. Built-in protection circuitry prevents damage to the MOS- FET bridge as well as the drive IC, and includes: overvoltage shutdown, over-temperature shutdown, overcurrent shut- down, undervoltage shutdown, reverse battery detect and supply cut-off (via external reverse battery MOSFET).

Features

  • Drives six N-channel low Rds(on)power MOSFETs
  • Built-in charge pump
  • Built-in current sense comparator
  • Built-in pwm mode control logic
  • Built-in circuit protection
  • Designed for fractional to integral hp BLDC motors

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Data Sheets
文檔名稱 文檔類型 軟件 描述
MC33395EWPDF下載 點(diǎn)擊下載 點(diǎn)擊下載 MC33395
Brochures
文檔名稱 文檔類型 軟件 描述
MC33395EWPDF下載 點(diǎn)擊下載 點(diǎn)擊下載 BR1567
MC33395EWPDF下載 點(diǎn)擊下載 點(diǎn)擊下載 BR1568
MC33395EWPDF下載 點(diǎn)擊下載 點(diǎn)擊下載 BR1569
Fact Sheets
文檔名稱 文檔類型 軟件 描述
MC33395EWPDF下載 點(diǎn)擊下載 點(diǎn)擊下載 MC33395FS